0405sc-1000m rev f microsemi ppg inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. preliminary specification general description the 0405sc-1000m is a common gate n-channel class ab silicon carbide static induction transistor (sit) capable of providing 1000 watts of rf power from 406 to 450 mhz. the transistor is designed for use in high power amplifiers supporting applications such as uhf weather radar and long range tracking radar. the device is an addition to a series of high power silicon carb ide transistors from microsemi ppg. case outline 55st fet (common gate) absolute maximum ratings voltage and current drain-source (v dss ) 250v gate-source (v gs ) -1v temperatures storage temperature -65 to +150 c operating junction temperature +250 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units i dss drain-source leakage current v gs = -20v, v dg = 125v 750 a i gss gate-source leakage current v gs = -20v, v ds = 0v 50 a jc 1 thermal resistance 0.15 oc/w functional characteristics @ 25 c, vdd = 125v, i dq(ave) = 250 ma, freq = 406, 425, 450 mhz, g pg common gate power gain p out = 1000 w, pulsed 8 8.5 db p in input power pulse width = 300us, df = 10% 140 155 w d drain efficiency f = 450 mhz, p out =1000w 50 % load mismatch f = 406 mhz, p out = 1000w 10:1 po +1db power output ? higher drive f = 450 mhz, pin = 180 w 1100 w vgs gate source voltage set for idq(ave) = 150ma 3.0 10.0 volts rev f may 2010 0405sc-1000m 1000watts, 125 volts, class ab 406 to 450 mhz silicon carbide sit
0405sc-1000m rev f microsemi ppg inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. typical rf performance curve 0405sc-1000m: gain & pout 300us 10% 125v 0 2 4 6 8 10 12 10 20 40 82 132 164 181 pin ( w ) gain(db) 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 pout(w) gain pou t 0405sc-1000m: drain efficiency 300us 10% 125v 10% 15% 20% 25% 30% 35% 40% 45% 50% 55% 60% 10 20 40 82 132 164 181 pin(w) drain eff (%) drain efficiency 0405sc-1000m
0405sc-1000m rev f microsemi ppg inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. test circuit board 0405sc-1000m test circuit component designations and values part description part description c1, c9, c13, c24, c25 330pf chip capacitor (atc 100b) z1 65 x 1463 mils (w x l) c2, c16, c19, c22, c23 10pf chip capacitor (atc 100b) z2 270 x 450 mils (w x l) c3 , c17, c20, c21 33pf chip capacitor (atc 100b) z3 530 x 273 mils (w x l) c4 4.7pf chip capacitor (atc 100b) z4 530 x 217 mils (w x l) c5, c6, c7, c8 20pf chip capacitor (atc 100b) z5 550 x 420 mils (w x l) c10 1000uf 160v electrolytic capacitor z6 270 x 158 mils (w x l) c11, c12 1uf chip capacitor z7 270 x 540 mils (w x l) c14, c15, c18 18pf chip capacitor (atc 100b) z8 65 x 1026 mils (w x l) pcb rogers 4350, r =3.48, 30mils, 1oz z9 65 x 311 mils (w x l) z10 40 x 345 mils (w x l) l2, l3 7 turns, 18awg, idia 0.2? l1, l4 ferrite coil inductor note: all z length dimensions include bends 0405sc-1000m
0405sc-1000m rev f microsemi ppg inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. impedance information pout = 1000w min vdd = 125v, idq = 150ma (avg) pulse format: 300us, 10% dc case outline 55st 0405sc-1000m z s z l input matching network output matching network 1.86 + j 2.08 0.82 + j 0.83 450 1.63 + j 2.94 0.39 + j 0.72 425 1.14 + j 2.32 0.53 + j 0.32 400 z l (ohms) z s (ohms) frequency (mhz) common gate 1 = drain 2 = gate 3 = source
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